NSBA123TF3T5G
onsemi
onsemi
TRANS PREBIAS PNP 50V SOT1123
$0.04
Available to order
Reference Price (USD)
8,000+
$0.10305
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
onsemi's NSBA123TF3T5G redefines reliability in the Transistors - Bipolar (BJT) - Single, Pre-Biased category. With built-in bias resistors, this component accelerates prototyping while maintaining signal integrity. Key features include 1) 300mA collector current capacity 2) Wide operating temperature range (-55 C to +150 C) 3) RoHS compliance. Implement in motor control systems, sensor interfaces, or battery-powered devices for optimal results.
Specifications
- Product Status: Active
- Transistor Type: PNP - Pre-Biased
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 50 V
- Resistor - Base (R1): 2.2 kOhms
- Resistor - Emitter Base (R2): -
- DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 254 mW
- Mounting Type: Surface Mount
- Package / Case: SOT-1123
- Supplier Device Package: SOT-1123
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