NSBA124XDXV6T1G
onsemi
onsemi
TRANS 2PNP PREBIAS 0.5W SOT563
$0.07
Available to order
Reference Price (USD)
4,000+
$0.10395
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NSBA124XDXV6T1G by onsemi is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. onsemi's state-of-the-art production facilities ensure that the NSBA124XDXV6T1G delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 500mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
Related Products
Panasonic Electronic Components
NP0J1A300A
onsemi
NSBC143EPDP6T5G
Toshiba Semiconductor and Storage
RN2706,LF
Nexperia USA Inc.
PEMD9,315
Toshiba Semiconductor and Storage
RN49A1FE(TE85L,F)
Rohm Semiconductor
UMH6NTR
Nexperia USA Inc.
PUMD14,115
NXP Semiconductors
PQMD10147
Toshiba Semiconductor and Storage
RN1961(TE85L,F)
Toshiba Semiconductor and Storage