PEMD9,315
Nexperia USA Inc.
Nexperia USA Inc.
TRANS PREBIAS 1NPN 1PNP SOT666
$0.07
Available to order
Reference Price (USD)
8,000+
$0.05940
Exquisite packaging
Discount
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Upgrade your electronic designs with the PEMD9,315 by Nexperia USA Inc., a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the PEMD9,315 excels in automotive systems, power management modules, and communication devices. Nexperia USA Inc.'s commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose PEMD9,315 for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Not For New Designs
- Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 10kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
- Vce Saturation (Max) @ Ib, Ic: 100mV @ 250µA, 5mA
- Current - Collector Cutoff (Max): 1µA
- Frequency - Transition: -
- Power - Max: 300mW
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-666
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