NSBC144EDP6T5G
onsemi
onsemi
TRANS PREBIAS 2NPN 50V SOT963
$0.05
Available to order
Reference Price (USD)
8,000+
$0.10305
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NSBC144EDP6T5G by onsemi is a cutting-edge pre-biased BJT array designed for high-performance applications. Its unique architecture provides superior current handling and thermal dissipation, making it ideal for power electronics and RF modules. Commonly employed in aerospace, defense, and consumer electronics, this transistor array offers exceptional reliability. onsemi's state-of-the-art production facilities ensure that the NSBC144EDP6T5G delivers consistent results under extreme conditions. Engineers trust this product for its precision, durability, and ease of integration into complex systems.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN - Pre-Biased (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 47kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: -
- Power - Max: 339mW
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
Related Products
Diodes Incorporated
DCX124EH-7
Diodes Incorporated
DDC144NS-7
Nexperia USA Inc.
PBLS6004D,115
onsemi
NSVBC124XPDXV6T1G
Toshiba Semiconductor and Storage
RN2506(TE85L,F)
Toshiba Semiconductor and Storage
RN2904FE,LXHF(CT
Toshiba Semiconductor and Storage
RN4984,LF(CT
Infineon Technologies
BCR10PNH6327XTSA1
Panasonic Electronic Components
UP0411100L
Toshiba Semiconductor and Storage