NSS12601CF8T1G
onsemi
onsemi
TRANS NPN 12V 6A CHIPFET
$0.32
Available to order
Reference Price (USD)
3,000+
$0.26796
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NSS12601CF8T1G Bipolar Junction Transistor (BJT) from onsemi, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the NSS12601CF8T1G is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose onsemi for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 12 V
- Vce Saturation (Max) @ Ib, Ic: 120mV @ 400mA, 4A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 2V
- Power - Max: 830 mW
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 8-SMD, Flat Lead
- Supplier Device Package: ChipFET™
Related Products
onsemi
15C01SS-TL-E
onsemi
BC337RL1G
Toshiba Semiconductor and Storage
2SA1832-GR,LXHF
Diodes Incorporated
ZTX451STZ
Nexperia USA Inc.
BFS20W,115
Microchip Technology
JANTXV2N918UB/TR
Nexperia USA Inc.
BSR31,115
Fairchild Semiconductor
MPSW01
Toshiba Semiconductor and Storage
2SA2056(TE85L,F)
Rohm Semiconductor