NSS20201MR6T1G
onsemi
onsemi
TRANS NPN 20V 2A 6TSOP
$0.17
Available to order
Reference Price (USD)
3,000+
$0.20610
Exquisite packaging
Discount
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The NSS20201MR6T1G Bipolar Junction Transistor (BJT) by onsemi is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NSS20201MR6T1G provides consistent performance in demanding applications. Choose onsemi for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 20 V
- Vce Saturation (Max) @ Ib, Ic: 150mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 100nA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 1A, 5V
- Power - Max: 460 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-23-6 Thin, TSOT-23-6
- Supplier Device Package: 6-TSOP
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