NST847BDP6T5G
onsemi
onsemi
TRANS 2NPN 45V 0.1A SOT963
$0.41
Available to order
Reference Price (USD)
8,000+
$0.06831
16,000+
$0.06107
24,000+
$0.05744
56,000+
$0.05141
Exquisite packaging
Discount
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The NST847BDP6T5G BJT Array from onsemi brings military-grade robustness to commercial applications. With a wide operating temperature range (-55 C to +150 C), this Discrete Semiconductor Product performs flawlessly in downhole drilling equipment and satellite subsystems. Its symmetrical layout simplifies heat sink integration for high-power RF amplifiers. The NST847BDP6T5G undergoes rigorous Q-Class testing to guarantee radiation hardness for aerospace deployments.
Specifications
- Product Status: Active
- Transistor Type: 2 NPN (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 45V
- Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
- Power - Max: 350mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-963
- Supplier Device Package: SOT-963
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