NSTB60BDW1T1
onsemi
onsemi
TRANS NPN PREBIAS/PNP SOT363
$0.05
Available to order
Reference Price (USD)
1+
$0.05000
500+
$0.0495
1000+
$0.049
1500+
$0.0485
2000+
$0.048
2500+
$0.0475
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the NSTB60BDW1T1 by onsemi, a pre-biased BJT array engineered for efficiency and durability. This discrete semiconductor product features matched transistors with built-in bias resistors, simplifying circuit design and reducing component count. Perfect for space-constrained applications, the NSTB60BDW1T1 excels in automotive systems, power management modules, and communication devices. onsemi's commitment to quality ensures that each transistor array meets stringent performance standards, providing stable operation across a wide temperature range. Choose NSTB60BDW1T1 for superior signal processing and energy-efficient performance.
Specifications
- Product Status: Obsolete
- Transistor Type: 1 NPN Pre-Biased, 1 PNP
- Current - Collector (Ic) (Max): 150mA
- Voltage - Collector Emitter Breakdown (Max): 50V
- Resistor - Base (R1): 22kOhms
- Resistor - Emitter Base (R2): 47kOhms
- DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V / 120 @ 5mA, 10V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA / 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 500nA
- Frequency - Transition: 140MHz
- Power - Max: 250mW
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
Related Products
onsemi
IMH20TR1G
Toshiba Semiconductor and Storage
RN4984,LXHF(CT
Rohm Semiconductor
UMH37NTN
onsemi
MUN5213DW1T3G
Nexperia USA Inc.
PIMN32-QX
Rohm Semiconductor
UMD25NTR
Nexperia USA Inc.
NHUMB9F
Toshiba Semiconductor and Storage
RN2965(TE85L,F)
Infineon Technologies
BCR141SH6327XTSA1
Toshiba Semiconductor and Storage