NSV60600MZ4T1G
onsemi
onsemi
TRANS PNP 60V 6A SOT223
$0.80
Available to order
Reference Price (USD)
1,000+
$0.25918
2,000+
$0.23632
5,000+
$0.22107
10,000+
$0.20582
25,000+
$0.20328
Exquisite packaging
Discount
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Experience unmatched performance with the NSV60600MZ4T1G Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NSV60600MZ4T1G delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 6 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 350mV @ 600mA, 6A
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1A, 2V
- Power - Max: 800 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223 (TO-261)
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