NSVBC856BM3T5G
onsemi
onsemi
TRANS PNP 65V 0.1A SOT723
$0.38
Available to order
Reference Price (USD)
8,000+
$0.05775
16,000+
$0.04909
24,000+
$0.04620
56,000+
$0.04331
200,000+
$0.03850
Exquisite packaging
Discount
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The NSVBC856BM3T5G Bipolar Junction Transistor (BJT) by onsemi is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NSVBC856BM3T5G provides consistent performance in demanding applications. Choose onsemi for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 65 V
- Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
- Current - Collector Cutoff (Max): 15nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
- Power - Max: 265 mW
- Frequency - Transition: 100MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-723
- Supplier Device Package: SOT-723
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