NSVBCP56-10T3G
onsemi
onsemi
TRANS NPN 80V 1A SOT223
$0.43
Available to order
Reference Price (USD)
4,000+
$0.22508
8,000+
$0.21056
12,000+
$0.19604
28,000+
$0.19362
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NSVBCP56-10T3G Bipolar Junction Transistor (BJT) from onsemi, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the NSVBCP56-10T3G is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose onsemi for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 80 V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
- Power - Max: 1.5 W
- Frequency - Transition: 130MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223 (TO-261)
Related Products
Microchip Technology
2N5302
Central Semiconductor Corp
TIP42 PBFREE
Rohm Semiconductor
2SB1709TL
MDD
BC848B
Microchip Technology
JAN2N720A
Rohm Semiconductor
2SCR523MT2L
onsemi
FJT44KTF
Nexperia USA Inc.
BF840,215
onsemi
NJVMJD44H11T4G
onsemi