NSVBSS63LT1G
onsemi
onsemi
TRANS PNP 100V 0.1A SOT23-3
$0.48
Available to order
Reference Price (USD)
3,000+
$0.08778
6,000+
$0.07900
15,000+
$0.07022
30,000+
$0.06584
75,000+
$0.05852
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NSVBSS63LT1G Bipolar Junction Transistor (BJT) by onsemi is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NSVBSS63LT1G provides consistent performance in demanding applications. Choose onsemi for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 100 mA
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
- Current - Collector Cutoff (Max): 100nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
- Power - Max: 225 mW
- Frequency - Transition: 95MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3 (TO-236)
Related Products
Central Semiconductor Corp
2N2405 PBFREE
Diodes Incorporated
MMST5401Q-7-F
onsemi
2SC3068-AA
Rohm Semiconductor
2SD2661T100
Diodes Incorporated
ZXTN618MATA
Fairchild Semiconductor
MMBT200-FS
Fairchild Semiconductor
2N5210TFR
Diodes Incorporated
DXTP07060BFG-7
NTE Electronics, Inc
NTE175
NTE Electronics, Inc