NTE175
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 300V 2A TO66
$5.66
Available to order
Reference Price (USD)
1+
$5.66000
500+
$5.6034
1000+
$5.5468
1500+
$5.4902
2000+
$5.4336
2500+
$5.377
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your circuit designs with the NTE175 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor offers exceptional performance in amplification and switching applications. Its high gain and low power dissipation make it suitable for use in audio equipment, sensors, and communication devices. The NTE175 is built to withstand harsh environments, ensuring reliability in industrial and consumer applications. Trust NTE Electronics, Inc to deliver high-quality discrete semiconductor products that meet your technical requirements.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 2 A
- Voltage - Collector Emitter Breakdown (Max): 300 V
- Vce Saturation (Max) @ Ib, Ic: 750mV @ 125mA, 1A
- Current - Collector Cutoff (Max): 5mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 100mA, 10V
- Power - Max: 35 W
- Frequency - Transition: 15MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
Related Products
NTE Electronics, Inc
NTE159-5
onsemi
2SA1708S-YMH-AN
onsemi
SBC808-25LT1G
Panjit International Inc.
MMBT2222A_R1_00001
Central Semiconductor Corp
2N3711 PBFREE
Central Semiconductor Corp
2N4398 PBFREE
Microchip Technology
JANKCA2N5238
Diodes Incorporated
FCX718TA
Diodes Incorporated
DSS5160T-7
Sanyo