NSVEMT1DXV6T1G
onsemi
onsemi
TRANS 2PNP 60V 0.1A SOT563
$0.42
Available to order
Reference Price (USD)
4,000+
$0.11435
Exquisite packaging
Discount
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The NSVEMT1DXV6T1G from onsemi is a high-performance Bipolar Junction Transistor (BJT) Array designed for precision amplification and switching applications. This Discrete Semiconductor Product integrates multiple transistors in a single package, offering enhanced thermal stability and space-saving benefits. Ideal for analog circuits, motor control, and signal processing, the NSVEMT1DXV6T1G ensures reliable performance in industrial automation, automotive electronics, and consumer devices. Its compact design and low power consumption make it a preferred choice for engineers seeking efficiency and durability.
Specifications
- Product Status: Active
- Transistor Type: 2 PNP (Dual)
- Current - Collector (Ic) (Max): 100mA
- Voltage - Collector Emitter Breakdown (Max): 60V
- Vce Saturation (Max) @ Ib, Ic: 500mV @ 5mA, 50mA
- Current - Collector Cutoff (Max): 500pA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 1mA, 6V
- Power - Max: 500mW
- Frequency - Transition: 140MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: SOT-563, SOT-666
- Supplier Device Package: SOT-563
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