NSVF4017SG4T1G
onsemi
onsemi
RF TRANS NPN 12V 10GHZ SC82FL/
$0.62
Available to order
Reference Price (USD)
3,000+
$0.21320
6,000+
$0.20020
15,000+
$0.18720
30,000+
$0.17810
Exquisite packaging
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Discover the NSVF4017SG4T1G, a premium RF Bipolar Junction Transistor (BJT) by onsemi, part of the Discrete Semiconductor Products lineup. This transistor is engineered for high-frequency applications, delivering outstanding performance in RF amplification and switching. Its advanced design ensures minimal signal loss and high efficiency, making it perfect for use in mobile communication, broadcast equipment, and satellite systems. The NSVF4017SG4T1G boasts features like high power gain, low intermodulation distortion, and superior thermal management. Whether you're designing RF amplifiers, oscillators, or mixers, this transistor provides the reliability and performance you need. Choose onsemi for cutting-edge RF BJT solutions.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Voltage - Collector Emitter Breakdown (Max): 12V
- Frequency - Transition: 10GHz
- Noise Figure (dB Typ @ f): 1.2dB @ 1GHz
- Gain: 17dB
- Power - Max: 450mW
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 50mA, 5V
- Current - Collector (Ic) (Max): 100mA
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 4-SMD, Flat Leads
- Supplier Device Package: SC-82FL/MCPH4
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