NTE2634
NTE Electronics, Inc
NTE Electronics, Inc
T-PNP SI VIDEO DR 1GHZ TO-126
$1.94
Available to order
Reference Price (USD)
1+
$1.94000
500+
$1.9206
1000+
$1.9012
1500+
$1.8818
2000+
$1.8624
2500+
$1.843
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Discover the NTE2634, a cutting-edge RF Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, part of the Discrete Semiconductor Products family. This transistor is optimized for RF amplification, delivering high linearity and low distortion. Its versatile design suits a wide range of applications, including mobile communication, broadcast systems, and RF test equipment. The NTE2634 features high power gain, excellent thermal performance, and long-term reliability. Whether for commercial or industrial use, this transistor ensures superior performance. Choose NTE Electronics, Inc for advanced RF BJT solutions that meet the evolving needs of the electronics industry.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Voltage - Collector Emitter Breakdown (Max): 95V
- Frequency - Transition: 1.2GHz
- Noise Figure (dB Typ @ f): -
- Gain: -
- Power - Max: 3W
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 50mA, 10V
- Current - Collector (Ic) (Max): 300mA
- Operating Temperature: 175°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-225AA, TO-126-3
- Supplier Device Package: TO-126
Related Products
Fairchild Semiconductor
KSC1730YTA
NXP USA Inc.
ON5088,115
Infineon Technologies
BFP196WNH6327XTSA1
NXP USA Inc.
BFU520WF
Infineon Technologies
BFP640FH6327XTSA1
NXP USA Inc.
BFU520X235
Harris Corporation
HFA3127B96-HC
Infineon Technologies
BFP740FH6327XTSA1
Intersil
HFA3128B
Infineon Technologies