NTB25P06T4G
onsemi
onsemi
MOSFET P-CH 60V 27.5A D2PAK
$2.47
Available to order
Reference Price (USD)
1+
$2.47000
500+
$2.4453
1000+
$2.4206
1500+
$2.3959
2000+
$2.3712
2500+
$2.3465
Exquisite packaging
Discount
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Optimize your power electronics with the NTB25P06T4G single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NTB25P06T4G combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 27.5A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 82mOhm @ 25A, 10V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
- Vgs (Max): ±15V
- Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 120W (Tj)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D²PAK
- Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
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