NTBG160N120SC1
onsemi
onsemi
SICFET N-CH 1200V 19.5A D2PAK
$12.32
Available to order
Reference Price (USD)
1+
$12.32000
500+
$12.1968
1000+
$12.0736
1500+
$11.9504
2000+
$11.8272
2500+
$11.704
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Optimize your power electronics with the NTBG160N120SC1 single MOSFET from onsemi. As a key player in the Discrete Semiconductor Products market, this component delivers high voltage tolerance and minimal power loss. Ideal for applications like solar inverters, electric vehicles, and robotics, the NTBG160N120SC1 combines cutting-edge technology with onsemi's renowned craftsmanship. Experience superior performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 19.5A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 33.8 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 678 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 136W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK-7
- Package / Case: TO-263-8, D²Pak (7 Leads + Tab), TO-263CA
Related Products
onsemi
NVMYS025N06CLTWG
Infineon Technologies
IRF40DM229
Panjit International Inc.
PJP8NA65A_T0_00001
STMicroelectronics
STW50N65DM6
Vishay Siliconix
SIHP21N60EF-GE3
Infineon Technologies
IPP60R040C7XKSA1
Wolfspeed, Inc.
C3M0075120K
Rectron USA
RM12N650LD
Vishay Siliconix
IRF9640SPBF
Fairchild Semiconductor