NTBGS001N06C
onsemi
onsemi
POWER MOSFET, 60 V, 1.1 M?, 342
$15.03
Available to order
Reference Price (USD)
1+
$15.03000
500+
$14.8797
1000+
$14.7294
1500+
$14.5791
2000+
$14.4288
2500+
$14.2785
Exquisite packaging
Discount
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Meet the NTBGS001N06C by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NTBGS001N06C stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 42A (Ta), 342A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Rds On (Max) @ Id, Vgs: 1.1mOhm @ 112A, 12V
- Vgs(th) (Max) @ Id: 4V @ 562µA
- Gate Charge (Qg) (Max) @ Vgs: 139 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 11110 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 245W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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