NTBGS002N06C
onsemi
onsemi
POWER MOSFET, 60 V, 2.2 M?, 211
$9.85
Available to order
Reference Price (USD)
1+
$9.85000
500+
$9.7515
1000+
$9.653
1500+
$9.5545
2000+
$9.456
2500+
$9.3575
Exquisite packaging
Discount
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The NTBGS002N06C from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NTBGS002N06C for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 60 V
- Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 211A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V, 12V
- Rds On (Max) @ Id, Vgs: 2.1mOhm @ 45A, 12V
- Vgs(th) (Max) @ Id: 4V @ 225µA
- Gate Charge (Qg) (Max) @ Vgs: 62.1 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 4620 pF @ 30 V
- FET Feature: -
- Power Dissipation (Max): 3.7W (Ta), 178W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: D2PAK (TO-263)
- Package / Case: TO-263-7, D²Pak (6 Leads + Tab)
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