NTD20N03L27-1G
onsemi
onsemi
MOSFET N-CH 30V 20A IPAK
$0.29
Available to order
Reference Price (USD)
1+
$0.29000
500+
$0.2871
1000+
$0.2842
1500+
$0.2813
2000+
$0.2784
2500+
$0.2755
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTD20N03L27-1G by onsemi is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose onsemi for innovation you can depend on.
Specifications
- Product Status: Obsolete
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 30 V
- Current - Continuous Drain (Id) @ 25°C: 20A (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 4V, 5V
- Rds On (Max) @ Id, Vgs: 27mOhm @ 10A, 5V
- Vgs(th) (Max) @ Id: 2V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 18.9 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 1.75W (Ta), 74W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: I-PAK
- Package / Case: TO-251-3 Short Leads, IPak, TO-251AA
Related Products
Taiwan Semiconductor Corporation
TSM80N1R2CP ROG
Infineon Technologies
IRFH8201TRPBF
STMicroelectronics
STI6N62K3
UnitedSiC
UJ4C075023B7S
Infineon Technologies
AUIRFS3004-7TRL
Nexperia USA Inc.
PSMN7R5-30YLDX
Toshiba Semiconductor and Storage
TPH2R506PL,L1Q
Microchip Technology
APT10035JLL
Alpha & Omega Semiconductor Inc.
AOI4N60
Vishay Siliconix