NTE101
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 25V 0.3A TO5
$10.32
Available to order
Reference Price (USD)
1+
$10.32000
500+
$10.2168
1000+
$10.1136
1500+
$10.0104
2000+
$9.9072
2500+
$9.804
Exquisite packaging
Discount
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Experience unmatched performance with the NTE101 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NTE101 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NTE Electronics, Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 300 mA
- Voltage - Collector Emitter Breakdown (Max): 25 V
- Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
- Current - Collector Cutoff (Max): 6µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 10mA, 1V
- Power - Max: 150 mW
- Frequency - Transition: -
- Operating Temperature: 85°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-205AA, TO-5-3 Metal Can
- Supplier Device Package: TO-5
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