NTE131
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 32V 1A TO66
$6.58
Available to order
Reference Price (USD)
1+
$6.58000
500+
$6.5142
1000+
$6.4484
1500+
$6.3826
2000+
$6.3168
2500+
$6.251
Exquisite packaging
Discount
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The NTE131 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NTE131 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 1 A
- Voltage - Collector Emitter Breakdown (Max): 32 V
- Vce Saturation (Max) @ Ib, Ic: 80mV @ 100mA, 1A
- Current - Collector Cutoff (Max): 1mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 36 @ 1A, 0V
- Power - Max: 6 W
- Frequency - Transition: -
- Operating Temperature: 90°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-213AA, TO-66-2
- Supplier Device Package: TO-66
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