NTE153MCP
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 90V 4A TO220
$5.45
Available to order
Reference Price (USD)
1+
$5.45000
500+
$5.3955
1000+
$5.341
1500+
$5.2865
2000+
$5.232
2500+
$5.1775
Exquisite packaging
Discount
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Optimize your electronic systems with the NTE153MCP Bipolar Junction Transistor (BJT) from NTE Electronics, Inc. This single BJT transistor is engineered for high efficiency and reliability, making it a top choice for amplification and switching circuits. Ideal for use in renewable energy systems, robotics, and automation, the NTE153MCP delivers superior performance in diverse environments. NTE Electronics, Inc's commitment to quality ensures that this transistor meets the highest industry standards. Upgrade your designs with this high-performance discrete semiconductor component.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 4 A
- Voltage - Collector Emitter Breakdown (Max): 90 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 300mA, 3A
- Current - Collector Cutoff (Max): 20µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 500mA, 5V
- Power - Max: 40 W
- Frequency - Transition: 8MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-220-3
- Supplier Device Package: TO-220
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