NTE181
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 100V 30A TO3
$8.50
Available to order
Reference Price (USD)
1+
$8.50000
500+
$8.415
1000+
$8.33
1500+
$8.245
2000+
$8.16
2500+
$8.075
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Upgrade your electronic designs with the NTE181 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the NTE181 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust NTE Electronics, Inc for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 30 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 800mV @ 750mA, 7.5A
- Current - Collector Cutoff (Max): 1mA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 25 @ 7.5A, 2V
- Power - Max: 200 W
- Frequency - Transition: 2MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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