NTE2306
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 160V 16A TO3PN
$4.97
Available to order
Reference Price (USD)
1+
$4.97000
500+
$4.9203
1000+
$4.8706
1500+
$4.8209
2000+
$4.7712
2500+
$4.7215
Exquisite packaging
Discount
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Discover the NTE2306 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the NTE2306 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NTE Electronics, Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 16 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 3.5V @ 2A, 16A
- Current - Collector Cutoff (Max): 750µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 15 @ 8A, 2V
- Power - Max: 125 W
- Frequency - Transition: 1MHz
- Operating Temperature: -65°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PN
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