NTE2322
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 40V 0.6A 14DIP
$4.73
Available to order
Reference Price (USD)
1+
$4.73000
500+
$4.6827
1000+
$4.6354
1500+
$4.5881
2000+
$4.5408
2500+
$4.4935
Exquisite packaging
Discount
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Experience unmatched performance with the NTE2322 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NTE2322 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose NTE Electronics, Inc for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 600 mA
- Voltage - Collector Emitter Breakdown (Max): 40 V
- Vce Saturation (Max) @ Ib, Ic: 1.6V @ 30mA, 300mA
- Current - Collector Cutoff (Max): 50nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 10V
- Power - Max: 650 mW
- Frequency - Transition: 200MHz
- Operating Temperature: -55°C ~ 125°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 14-DIP (0.300", 7.62mm)
- Supplier Device Package: 14-DIP
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