NTE2340
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 60V 8A 3SIP
$2.58
Available to order
Reference Price (USD)
1+
$2.58000
500+
$2.5542
1000+
$2.5284
1500+
$2.5026
2000+
$2.4768
2500+
$2.451
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE2340 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NTE2340 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 60 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 8mA, 4A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 4A, 3V
- Power - Max: 1.3 W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: 3-SIP
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