NTE249
NTE Electronics, Inc

NTE Electronics, Inc
TRANS NPN DARL 100V 16A TO3
$8.38
Available to order
Reference Price (USD)
1+
$8.38000
500+
$8.2962
1000+
$8.2124
1500+
$8.1286
2000+
$8.0448
2500+
$7.961
Exquisite packaging
Discount
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Upgrade your electronic designs with the NTE249 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the NTE249 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust NTE Electronics, Inc for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 16 A
- Voltage - Collector Emitter Breakdown (Max): 100 V
- Vce Saturation (Max) @ Ib, Ic: 4V @ 80mA, 16A
- Current - Collector Cutoff (Max): 3mA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 10A, 3V
- Power - Max: 150 W
- Frequency - Transition: -
- Operating Temperature: -55°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3