NZT605
onsemi
onsemi
TRANS NPN DARL 110V 1.5A SOT223
$0.60
Available to order
Reference Price (USD)
4,000+
$0.14875
8,000+
$0.13916
12,000+
$0.12956
28,000+
$0.12796
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Experience unmatched performance with the NZT605 Bipolar Junction Transistor (BJT) by onsemi. This single BJT transistor is crafted for high gain and low noise, making it ideal for audio and RF applications. Whether you're working on amplifiers, oscillators, or signal processors, the NZT605 delivers exceptional results. Its rugged design ensures reliability in harsh conditions, making it a favorite among engineers. Choose onsemi for premium discrete semiconductor products that power the future of electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 1.5 A
- Voltage - Collector Emitter Breakdown (Max): 110 V
- Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
- Current - Collector Cutoff (Max): 10nA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
- Power - Max: 1 W
- Frequency - Transition: 150MHz
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-261-4, TO-261AA
- Supplier Device Package: SOT-223-4
Related Products
NTE Electronics, Inc
NTE388
Microchip Technology
JANTXV2N3637UB
onsemi
NJVMJD31CT4G
Renesas Electronics America Inc
2SD2106-E
Rohm Semiconductor
UML6NTR
onsemi
NSS30070MR6T1G
Fairchild Semiconductor
MPSA12
Fairchild Semiconductor
BC81716MTF
onsemi
2SA1706S-AN
onsemi