NTE2682
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN DARL 160V 8A TO3PL
$8.55
Available to order
Reference Price (USD)
1+
$8.55000
500+
$8.4645
1000+
$8.379
1500+
$8.2935
2000+
$8.208
2500+
$8.1225
Exquisite packaging
Discount
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Discover the NTE2682 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc, a key component in discrete semiconductor products. This single BJT transistor excels in high-speed switching and linear amplification applications. With its low noise and high gain characteristics, the NTE2682 is perfect for audio amplifiers, signal processing, and RF circuits. Designed for durability and performance, this transistor is a must-have for hobbyists and professionals alike. Choose NTE Electronics, Inc for reliable and efficient electronic components that power innovation.
Specifications
- Product Status: Active
- Transistor Type: NPN - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 160 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 7mA, 7A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 3500 @ 7A, 5V
- Power - Max: 3.5 W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3PL
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