NTE2686
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP DARL 150V 8A TO3PML
$4.73
Available to order
Reference Price (USD)
1+
$4.73000
500+
$4.6827
1000+
$4.6354
1500+
$4.5881
2000+
$4.5408
2500+
$4.4935
Exquisite packaging
Discount
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The NTE2686 Bipolar Junction Transistor (BJT) from NTE Electronics, Inc is a standout in the discrete semiconductor products category. Designed for single-stage amplification and high-speed switching, this BJT transistor is widely used in automotive, aerospace, and consumer electronics. With its excellent thermal performance and high current capacity, the NTE2686 is a reliable component for demanding applications. NTE Electronics, Inc's dedication to innovation ensures that this transistor meets the evolving needs of the electronics industry. Elevate your designs with this high-performance BJT transistor.
Specifications
- Product Status: Active
- Transistor Type: PNP - Darlington
- Current - Collector (Ic) (Max): 8 A
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 6mA, 6A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 4000 @ 6A, 4V
- Power - Max: 75 W
- Frequency - Transition: 65MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3 Full Pack
- Supplier Device Package: TO-3PML
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