NTE2931
NTE Electronics, Inc
NTE Electronics, Inc
MOSFET N-CH 200V 12.8A TO3PML
$6.06
Available to order
Reference Price (USD)
1+
$6.06000
500+
$5.9994
1000+
$5.9388
1500+
$5.8782
2000+
$5.8176
2500+
$5.757
Exquisite packaging
Discount
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The NTE2931 from NTE Electronics, Inc redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NTE2931 offers the precision and reliability you need. Trust NTE Electronics, Inc to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 200 V
- Current - Continuous Drain (Id) @ 25°C: 12.8A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 10V
- Rds On (Max) @ Id, Vgs: 180mOhm @ 6.4A, 40V
- Vgs(th) (Max) @ Id: 4V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
- Vgs (Max): ±30V
- Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
- FET Feature: -
- Power Dissipation (Max): 73W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-3PML
- Package / Case: TO-3P-3 Full Pack
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