NTE326
NTE Electronics, Inc
NTE Electronics, Inc
JFET-P-CH GEN PURP AF AMP
$3.60
Available to order
Reference Price (USD)
1+
$3.60000
500+
$3.564
1000+
$3.528
1500+
$3.492
2000+
$3.456
2500+
$3.42
Exquisite packaging
Discount
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The NTE326 JFET by NTE Electronics, Inc is a versatile addition to our Discrete Semiconductor Products range. Optimized for low-power applications, this transistor delivers microampere-level drain current with precise control characteristics. Its unique selling points include industry-leading Yfs linearity and ultra-stable operation over decades of use. Common implementations include biomedical sensors, environmental monitoring equipment, and battery-powered field devices. The NTE326 performs exceptionally well in electrometer-grade input stages, photovoltaic detectors, and ultra-low-noise oscilloscopes. Designed with reliability in mind, it features proprietary passivation technology that prevents moisture ingress and ensures stable parameters throughout the product lifecycle.
Specifications
- Product Status: Active
- FET Type: P-Channel
- Voltage - Breakdown (V(BR)GSS): 40 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 2 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 1 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 15V
- Resistance - RDS(On): -
- Power - Max: 310 mW
- Operating Temperature: -65°C ~ 135°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-226-3, TO-92-3 (TO-226AA)
- Supplier Device Package: TO-92
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