MMBFJ111
onsemi
onsemi
JFET N-CH 35V 350MW SOT23-3
$0.45
Available to order
Reference Price (USD)
3,000+
$0.11090
6,000+
$0.10418
15,000+
$0.09745
30,000+
$0.08939
75,000+
$0.08603
Exquisite packaging
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The MMBFJ111 from onsemi represents the next generation of JFET technology in Discrete Semiconductor Products. This N-channel/P-channel JFET delivers exceptional IDSS matching and transconductance linearity for precision analog designs. Key advantages include ultra-low 1/f noise, wide dynamic range, and stable operation from -55 C to +150 C. The MMBFJ111 is widely adopted in scientific instrumentation, including particle detectors, mass spectrometers, and telescope sensor arrays. Commercial applications span from boutique guitar effects pedals to industrial process control systems. Engineers trust this JFET for its repeatable parameters batch-to-batch and exceptional longevity in continuous operation scenarios.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 35 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 20 mA @ 15 V
- Current Drain (Id) - Max: -
- Voltage - Cutoff (VGS off) @ Id: 3 V @ 1 µA
- Input Capacitance (Ciss) (Max) @ Vds: -
- Resistance - RDS(On): 30 Ohms
- Power - Max: 350 mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: SOT-23-3
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