2SK208-R(TE85L,F)
Toshiba Semiconductor and Storage
Toshiba Semiconductor and Storage
JFET N-CH 50V S-MINI
$0.52
Available to order
Reference Price (USD)
3,000+
$0.13365
6,000+
$0.12555
15,000+
$0.11745
30,000+
$0.11340
Exquisite packaging
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The 2SK208-R(TE85L,F) from Toshiba Semiconductor and Storage represents the next generation of JFET technology in Discrete Semiconductor Products. This N-channel/P-channel JFET delivers exceptional IDSS matching and transconductance linearity for precision analog designs. Key advantages include ultra-low 1/f noise, wide dynamic range, and stable operation from -55 C to +150 C. The 2SK208-R(TE85L,F) is widely adopted in scientific instrumentation, including particle detectors, mass spectrometers, and telescope sensor arrays. Commercial applications span from boutique guitar effects pedals to industrial process control systems. Engineers trust this JFET for its repeatable parameters batch-to-batch and exceptional longevity in continuous operation scenarios.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Voltage - Breakdown (V(BR)GSS): 50 V
- Drain to Source Voltage (Vdss): -
- Current - Drain (Idss) @ Vds (Vgs=0): 300 µA @ 10 V
- Current Drain (Id) - Max: 6.5 mA
- Voltage - Cutoff (VGS off) @ Id: 400 mV @ 100 nA
- Input Capacitance (Ciss) (Max) @ Vds: 8.2pF @ 10V
- Resistance - RDS(On): -
- Power - Max: 100 mW
- Operating Temperature: 125°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: TO-236-3, SC-59, SOT-23-3
- Supplier Device Package: S-Mini
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