NTE37
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 140V 12A TO3P
$5.18
Available to order
Reference Price (USD)
1+
$5.18000
500+
$5.1282
1000+
$5.0764
1500+
$5.0246
2000+
$4.9728
2500+
$4.921
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
The NTE37 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc is a versatile component in the discrete semiconductor products category. Designed for single-stage amplification and switching, this BJT transistor is widely used in medical devices, instrumentation, and power electronics. With its excellent thermal stability and low leakage current, the NTE37 provides consistent performance in demanding applications. Choose NTE Electronics, Inc for cutting-edge semiconductor solutions that drive innovation and efficiency in your projects.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 12 A
- Voltage - Collector Emitter Breakdown (Max): 140 V
- Vce Saturation (Max) @ Ib, Ic: 1.1V @ 500mA, 5A
- Current - Collector Cutoff (Max): 100µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 1A, 5V
- Power - Max: 100 W
- Frequency - Transition: 15MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-3P-3, SC-65-3
- Supplier Device Package: TO-3P
Related Products
NXP USA Inc.
BFU550235
Nexperia USA Inc.
PBSS301NZ,135
NXP USA Inc.
BLF10M6LS200U112
Nexperia USA Inc.
BSR41F
Nexperia USA Inc.
PMBT2907AMYL
Rohm Semiconductor
2SC5658T2LR
Rohm Semiconductor
UMT4401U3HZGT106
Fairchild Semiconductor
MPSA14D26Z
onsemi
MPSA06RLG
Nexperia USA Inc.