NTE387
NTE Electronics, Inc
NTE Electronics, Inc
TRANS NPN 150V 50A TO3
$37.60
Available to order
Reference Price (USD)
1+
$37.60000
500+
$37.224
1000+
$36.848
1500+
$36.472
2000+
$36.096
2500+
$35.72
Exquisite packaging
Discount
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Upgrade your electronic designs with the NTE387 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the NTE387 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust NTE Electronics, Inc for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: NPN
- Current - Collector (Ic) (Max): 50 A
- Voltage - Collector Emitter Breakdown (Max): 150 V
- Vce Saturation (Max) @ Ib, Ic: 3V @ 10A, 50A
- Current - Collector Cutoff (Max): 50µA
- DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 4V
- Power - Max: 250 W
- Frequency - Transition: 30MHz
- Operating Temperature: -65°C ~ 200°C (TJ)
- Mounting Type: Through Hole
- Package / Case: TO-204AA, TO-3
- Supplier Device Package: TO-3
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