NTE4153NT1G
onsemi
onsemi
MOSFET N-CH 20V 915MA SC89-3
$0.50
Available to order
Reference Price (USD)
3,000+
$0.09641
6,000+
$0.08715
15,000+
$0.07789
30,000+
$0.07325
75,000+
$0.06538
150,000+
$0.06307
Exquisite packaging
Discount
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Upgrade your designs with the NTE4153NT1G by onsemi, a top-tier single MOSFET in the Discrete Semiconductor Products range. This component shines in high-power applications such as server farms, electric vehicle charging stations, and smart grid technology. With its low conduction losses and high reliability, the NTE4153NT1G is the ideal choice for engineers working with Transistors - FETs, MOSFETs - Single components.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
- Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
- Vgs(th) (Max) @ Id: 1.1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
- Vgs (Max): ±6V
- Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 300mW (Tj)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SC-89-3
- Package / Case: SC-89, SOT-490
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