NTE59
NTE Electronics, Inc
NTE Electronics, Inc
TRANS PNP 200V 17A 3SIP
$15.75
Available to order
Reference Price (USD)
1+
$15.75000
500+
$15.5925
1000+
$15.435
1500+
$15.2775
2000+
$15.12
2500+
$14.9625
Exquisite packaging
Discount
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Upgrade your electronic designs with the NTE59 Bipolar Junction Transistor (BJT) by NTE Electronics, Inc. This single BJT transistor is engineered for precision and reliability, featuring low saturation voltage and high current gain. Perfect for switching and amplification tasks, the NTE59 is widely used in consumer electronics, industrial automation, and telecommunications. Its compact design and superior thermal performance make it a preferred choice for engineers worldwide. Trust NTE Electronics, Inc for high-quality discrete semiconductor products that meet the demands of modern electronics.
Specifications
- Product Status: Active
- Transistor Type: PNP
- Current - Collector (Ic) (Max): 17 A
- Voltage - Collector Emitter Breakdown (Max): 200 V
- Vce Saturation (Max) @ Ib, Ic: 2.5V @ 1A, 10A
- Current - Collector Cutoff (Max): 100µA (ICBO)
- DC Current Gain (hFE) (Min) @ Ic, Vce: 20 @ 8A, 4V
- Power - Max: 200 W
- Frequency - Transition: 20MHz
- Operating Temperature: 150°C (TJ)
- Mounting Type: Through Hole
- Package / Case: 3-SIP
- Supplier Device Package: 3-SIP
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