NTH4L022N120M3S
onsemi
onsemi
SIC MOS TO247-4L 22MOHM 1200V
$36.15
Available to order
Reference Price (USD)
1+
$36.15000
500+
$35.7885
1000+
$35.427
1500+
$35.0655
2000+
$34.704
2500+
$34.3425
Exquisite packaging
Discount
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The NTH4L022N120M3S from onsemi redefines excellence in the Transistors - FETs, MOSFETs - Single classification. This Discrete Semiconductor Product boasts advanced thermal management, high-frequency operation, and exceptional durability. Whether you're designing medical equipment, aerospace systems, or IoT devices, the NTH4L022N120M3S offers the precision and reliability you need. Trust onsemi to power your next breakthrough innovation.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 68A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 18V
- Rds On (Max) @ Id, Vgs: 30mOhm @ 40A, 18V
- Vgs(th) (Max) @ Id: 4.4V @ 20mA
- Gate Charge (Qg) (Max) @ Vgs: 151 nC @ 18 V
- Vgs (Max): +22V, -10V
- Input Capacitance (Ciss) (Max) @ Vds: 3175 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 352W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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