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NTH4L080N120SC1

onsemi
NTH4L080N120SC1 Preview
onsemi
SICFET N-CH 1200V 29A TO247-4
$14.45
Available to order
Reference Price (USD)
1+
$14.45000
500+
$14.3055
1000+
$14.161
1500+
$14.0165
2000+
$13.872
2500+
$13.7275
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 29A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 110mOhm @ 20A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 5mA
  • Gate Charge (Qg) (Max) @ Vgs: 56 nC @ 20 V
  • Vgs (Max): +25V, -15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1670 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 170W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-4L
  • Package / Case: TO-247-4

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