NTH4L160N120SC1
onsemi
onsemi
SICFET N-CH 1200V 17.3A TO247
$5.89
Available to order
Reference Price (USD)
1+
$5.88556
500+
$5.8267044
1000+
$5.7678488
1500+
$5.7089932
2000+
$5.6501376
2500+
$5.591282
Exquisite packaging
Discount
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The NTH4L160N120SC1 by onsemi is a standout in the Transistors - FETs, MOSFETs - Single segment, offering exceptional power handling and efficiency. Designed for precision and reliability, this MOSFET is widely used in audio amplifiers, DC-DC converters, and battery management systems. With advanced features like avalanche energy resistance and low leakage current, it's a top pick for professionals in the Discrete Semiconductor Products field. Choose onsemi for innovation you can depend on.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: SiCFET (Silicon Carbide)
- Drain to Source Voltage (Vdss): 1200 V
- Current - Continuous Drain (Id) @ 25°C: 17.3A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 20V
- Rds On (Max) @ Id, Vgs: 224mOhm @ 12A, 20V
- Vgs(th) (Max) @ Id: 4.3V @ 2.5mA
- Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 20 V
- Vgs (Max): +25V, -15V
- Input Capacitance (Ciss) (Max) @ Vds: 665 pF @ 800 V
- FET Feature: -
- Power Dissipation (Max): 111W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Through Hole
- Supplier Device Package: TO-247-4L
- Package / Case: TO-247-4
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