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NTHL040N120SC1

onsemi
NTHL040N120SC1 Preview
onsemi
SICFET N-CH 1200V 60A TO247-3
$20.98
Available to order
Reference Price (USD)
1+
$20.98000
500+
$20.7702
1000+
$20.5604
1500+
$20.3506
2000+
$20.1408
2500+
$19.931
Exquisite packaging
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: SiCFET (Silicon Carbide)
  • Drain to Source Voltage (Vdss): 1200 V
  • Current - Continuous Drain (Id) @ 25°C: 60A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): 20V
  • Rds On (Max) @ Id, Vgs: 56mOhm @ 35A, 20V
  • Vgs(th) (Max) @ Id: 4.3V @ 10mA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 20 V
  • Vgs (Max): +25V, -15V
  • Input Capacitance (Ciss) (Max) @ Vds: 1781 pF @ 800 V
  • FET Feature: -
  • Power Dissipation (Max): 348W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Through Hole
  • Supplier Device Package: TO-247-3
  • Package / Case: TO-247-3

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