NTJD1155LT1G
onsemi
onsemi
MOSFET N/P-CH 8V 1.3A SOT363
$0.44
Available to order
Reference Price (USD)
3,000+
$0.13145
6,000+
$0.12386
15,000+
$0.11627
30,000+
$0.10716
75,000+
$0.10336
Exquisite packaging
Discount
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Choose the NTJD1155LT1G from onsemi for your Discrete Semiconductor Products needs. This Transistors - FETs, MOSFETs - Arrays solution is built for high-power and high-frequency applications, delivering excellent performance with minimal energy loss. Perfect for automotive electronics, wireless charging, and industrial control systems, the NTJD1155LT1G stands out for its reliability and efficiency. onsemi's advanced engineering makes this component a trusted choice for professionals.
Specifications
- Product Status: Active
- FET Type: N and P-Channel
- FET Feature: Standard
- Drain to Source Voltage (Vdss): 8V
- Current - Continuous Drain (Id) @ 25°C: 1.3A
- Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: -
- Input Capacitance (Ciss) (Max) @ Vds: -
- Power - Max: 400mW
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Package / Case: 6-TSSOP, SC-88, SOT-363
- Supplier Device Package: SC-88/SC70-6/SOT-363
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