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NTMTSC1D6N10MCTXG

onsemi
NTMTSC1D6N10MCTXG Preview
onsemi
MOSFET N-CH 100V 35A/267A 8TDFNW
$7.04
Available to order
Reference Price (USD)
1+
$7.04000
500+
$6.9696
1000+
$6.8992
1500+
$6.8288
2000+
$6.7584
2500+
$6.688
Exquisite packaging
Discount
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Specifications

  • Product Status: Active
  • FET Type: N-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 100 V
  • Current - Continuous Drain (Id) @ 25°C: 35A (Ta), 267A (Tc)
  • Drive Voltage (Max Rds On, Min Rds On): -
  • Rds On (Max) @ Id, Vgs: 1.7mOhm @ 90A, 10V
  • Vgs(th) (Max) @ Id: 4V @ 650µA
  • Gate Charge (Qg) (Max) @ Vgs: 106 nC @ 10 V
  • Vgs (Max): ±20V
  • Input Capacitance (Ciss) (Max) @ Vds: 7630 pF @ 50 V
  • FET Feature: -
  • Power Dissipation (Max): 5.1W (Ta), 291W (Tc)
  • Operating Temperature: -55°C ~ 175°C (TJ)
  • Mounting Type: Surface Mount, Wettable Flank
  • Supplier Device Package: 8-TDFNW (8.3x8.4)
  • Package / Case: 8-PowerTDFN

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