NTTFS1D2N02P1E
onsemi
onsemi
MOSFET N-CH 25V 23A/180A 8PQFN
$1.87
Available to order
Reference Price (USD)
1+
$1.87000
500+
$1.8513
1000+
$1.8326
1500+
$1.8139
2000+
$1.7952
2500+
$1.7765
Exquisite packaging
Discount
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The NTTFS1D2N02P1E from onsemi sets new standards in the Transistors - FETs, MOSFETs - Single market. This Discrete Semiconductor Product delivers exceptional performance in switching regulators, class D amplifiers, and power management ICs. Featuring advanced silicon technology and robust packaging, it's built to withstand rigorous operating conditions. When quality matters, professionals turn to onsemi's NTTFS1D2N02P1E for their critical applications.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 25 V
- Current - Continuous Drain (Id) @ 25°C: 23A (Ta), 180A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 1mOhm @ 38A, 10V
- Vgs(th) (Max) @ Id: 2V @ 934µA
- Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 4.5 V
- Vgs (Max): +16V, -12V
- Input Capacitance (Ciss) (Max) @ Vds: 4040 pF @ 13 V
- FET Feature: -
- Power Dissipation (Max): 820mW (Ta), 52W (Tc)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-PQFN (3.3x3.3)
- Package / Case: 8-PowerWDFN
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