NTZS3151PT1H
onsemi
onsemi
MOSFET P-CH 20V 860MA SOT563-6
$0.08
Available to order
Reference Price (USD)
1+
$0.08000
500+
$0.0792
1000+
$0.0784
1500+
$0.0776
2000+
$0.0768
2500+
$0.076
Exquisite packaging
Discount
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Meet the NTZS3151PT1H by onsemi, a high-efficiency single MOSFET engineered for superior performance in the Discrete Semiconductor Products arena. Featuring low gate drive requirements and high switching frequency, this component is perfect for RF applications, power tools, and HVAC systems. The NTZS3151PT1H stands out in the Transistors - FETs, MOSFETs - Single category for its rugged design and consistent output. Choose quality, choose onsemi.
Specifications
- Product Status: Obsolete
- FET Type: P-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 20 V
- Current - Continuous Drain (Id) @ 25°C: 860mA (Ta)
- Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
- Rds On (Max) @ Id, Vgs: 150mOhm @ 950mA, 4.5V
- Vgs(th) (Max) @ Id: 1V @ 250µA
- Gate Charge (Qg) (Max) @ Vgs: 5.6 nC @ 4.5 V
- Vgs (Max): ±8V
- Input Capacitance (Ciss) (Max) @ Vds: 458 pF @ 16 V
- FET Feature: -
- Power Dissipation (Max): 170mW (Ta)
- Operating Temperature: -55°C ~ 150°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: SOT-563
- Package / Case: SOT-563, SOT-666
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