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NVF6P02T3G

onsemi
NVF6P02T3G Preview
onsemi
MOSFET P-CH 20V 10A SOT-223
$1.33
Available to order
Reference Price (USD)
4,000+
$0.46585
8,000+
$0.44256
12,000+
$0.42592
Exquisite packaging
Discount
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Specifications

  • Product Status: Not For New Designs
  • FET Type: P-Channel
  • Technology: MOSFET (Metal Oxide)
  • Drain to Source Voltage (Vdss): 20 V
  • Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
  • Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
  • Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
  • Vgs(th) (Max) @ Id: 1V @ 250µA
  • Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
  • Vgs (Max): ±8V
  • Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
  • FET Feature: -
  • Power Dissipation (Max): 8.3W (Ta)
  • Operating Temperature: -55°C ~ 150°C (TJ)
  • Mounting Type: Surface Mount
  • Supplier Device Package: SOT-223 (TO-261)
  • Package / Case: TO-261-4, TO-261AA

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