NVMFD6H852NLT1G
onsemi
onsemi
MOSFET N-CH 80V 7A/25A 8DFN DL
$1.23
Available to order
Reference Price (USD)
1+
$1.23000
500+
$1.2177
1000+
$1.2054
1500+
$1.1931
2000+
$1.1808
2500+
$1.1685
Exquisite packaging
Discount
TT / Paypal / Credit Card / Western Union / Money Gram
Enhance your electronic projects with the NVMFD6H852NLT1G single MOSFET from onsemi. This Discrete Semiconductor Product excels in power conversion and management, featuring ultra-low RDS(on) and high-speed switching. Its compact design and durability make it suitable for consumer electronics, telecommunications, and computing devices. Trust onsemi's NVMFD6H852NLT1G for unmatched quality and performance in the Transistors - FETs, MOSFETs - Single category.
Specifications
- Product Status: Active
- FET Type: N-Channel
- Technology: MOSFET (Metal Oxide)
- Drain to Source Voltage (Vdss): 80 V
- Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 25A (Tc)
- Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
- Rds On (Max) @ Id, Vgs: 25.5mOhm @ 10A, 10V
- Vgs(th) (Max) @ Id: 2V @ 26µA
- Gate Charge (Qg) (Max) @ Vgs: 10 nC @ 10 V
- Vgs (Max): ±20V
- Input Capacitance (Ciss) (Max) @ Vds: 521 pF @ 40 V
- FET Feature: -
- Power Dissipation (Max): 3.2W (Ta), 38W (Tc)
- Operating Temperature: -55°C ~ 175°C (TJ)
- Mounting Type: Surface Mount
- Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
- Package / Case: 8-PowerTDFN
Related Products
Fairchild Semiconductor
ISL9N302AS3ST
onsemi
NTD4979NT4G
Nexperia USA Inc.
PXN012-60QLJ
Infineon Technologies
IPB020N04NGATMA1
Infineon Technologies
IRFB3306GPBF
onsemi
NTTFS4939NTAG
IXYS
IXFH140N20X3
onsemi
FDP047N08
Diodes Incorporated
DMN2500UFB4-7
Infineon Technologies